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2SA1182

Part Number	2SA1182
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1182 Audio Frequency Low Power Amplifier Applications Dri...
Datasheet	2SA1182 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications 2SA1182 Unit: mm  AEC-Q101 Qualified (Note1).
 Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA  Complementary to 2SC2859.
Note1: For detail information, please contact our sales.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol Rating Unit VCBO 35 V VCEO 30 V VEBO 5 V IC 500 mA IB 5...

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