2SA1162

Bipolar Transistors Silicon PNP Epitaxial Type 2SA1162 1. Applications Low-Frequency Amplifiers Audio Frequency General Purpose Amplifier Applications 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = -50 V (3) High collector current: IC = -150 mA (max) (4) High hFE: hFE = 70 to 400 (5) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) (6) Low noise: NF = 1 dB (typ.), 10 dB (max) (7) Complementary to 2SC2712 3. Packaging 2SA1162 S-Mini 1: Base 2: Emitter 3: Collector ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1982-12 2021-10-06 Rev.3.0 4. Orderable part number 2SA1162 Orderable part number AEC-Q101 Note 2SA1162-O 2SA1162-O,LF � General Use 2SA1162-O,LXGF YES (Note 1) Unintended Use 2SA1162-Y 2SA1162-O,LXHF 2SA1162-Y,LF YES � Automotive Use General Use 2SA1162-Y,LXGF YES (Note 1) Unintended Use 2SA1162-GR 2SA1162-Y,LXHF 2SA1162-GR,LF YES � Automotive Use General Use 2SA1162-GR,LXGF YES (Note 1) Unintended Use 2SA1162-GR,LXHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. (Note 1) (Note 1) (Note 1) 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current Collector power dissipation Junct...