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FGPF4533 Dataheets PDF



Part Number FGPF4533
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description PDP IGBT
Datasheet FGPF4533 DatasheetFGPF4533 Datasheet (PDF)

FGPF4533 330V, PDP Trench IGBT August 2010 FGPF4533 330V, PDP IGBT Features • High current capability • Low saturation voltage: VCE (sat) =1.55 V @ IC = 50 A • High input impedance • Fast switching • RoHS compliant General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Applications • PDP System GC E TO-220F (Retractable) Absolute Maximum Ratin.

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FGPF4533 330V, PDP Trench IGBT August 2010 FGPF4533 330V, PDP IGBT Features • High current capability • Low saturation voltage: VCE (sat) =1.55 V @ IC = 50 A • High input impedance • Fast switching • RoHS compliant General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Applications • PDP System GC E TO-220F (Retractable) Absolute Maximum Ratings Symbol VCES VGES IC pulse(1)* PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 25oC @ TC = 100 C o Ratings 330 ± 30 200 28.4 11.4 -55 to +150 -55 to +150 300 Units V V A W W o o o C C C Thermal Characteristics Symbol RθJC(IGBT) RθJA Notes: (1) Half Sine Wave, D < 0.01, pluse width < 5μsec * Ic_pluse limited by max Tj Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Typ. - Max. 4.4 62.5 Units o o C/W C/W ©2010 Fairchild Semiconductor Corporation FGPF4533 Rev. B 1 www.fairchildsemi.com Free Datasheet http://www.datasheet4u.com/ FGPF4533 330V, PDP Trench IGBT Package Marking and Ordering Information Device Marking FGPF4533 Device FGPF4533TU Package TO-220F Packaging Type Tube Qty per Tube 50ea Max Qty per Box - Electrical Characteristics of the IGBT Symbol Off Characteristics BVCES ΔBVCES ΔTJ ICES IGES TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250μA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 330 - 0.3 - 100 ±400 V V/oC μA nA On Characteristics VGE(th) G-E Threshold Voltage IC = 250μA, VCE = VGE IC = 20A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 50A, VGE = 15V, TC = 25oC IC = 50A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 1294 57 41 pF pF pF 2.4 3.3 1.15 1.55 1.6 4.0 1.8 V V V V Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 200V, IC = 20A VGE = 15V VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 125oC VCC = 200V, IC = 20A RG = 5Ω, VGE = 15V Resistive Load, TC = 25oC 6 22 40 220 6 24 42 277 44 6 14 ns ns ns ns ns ns ns ns nC nC nC FGPF4533 Rev. B 2 www.fairchildsemi.com FGPF4533 330V, PDP Trench IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 200 TC = 25 C o Figure 2. Typical Output Characteristics 200 TC = 125 C o 20V 15V 12V 10V 20V 15V 12V 10V Collector Current, IC [A] Collector Current, IC [A] 150 VGE = 8V 150 100 100 VGE = 8V 50 50 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 6 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 6 Figure 3. Typical Saturation Voltage Characteristics 200 Common Emitter VGE = 15V Figure 4. Transfer Characteristics 200 Common Emitter VCE = 10V Collector Current, IC [A] Collector Current, IC [A] 150 TC = 25 C TC = 125 C o o 150 TC = 25 C TC = 125 C o o 100 100 50 50 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5 0 0 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 1.7 Collector-Emitter Voltage, VCE [V] Common Emitter VGE = 15V 50A Figure 6. Saturation Voltage vs. VGE 20 Common Emitter Collector-Emitter Voltage, VCE [V] 1.6 1.5 1.4 1.3 1.2 1.1 1.0 TC = 25 C o 16 12 50A 30A 8 30A IC = 20A 4 IC = 20A 0 20 40 60 80 100 120 140 o Collector-EmitterCase Temperature, TC [ C] 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 FGPF4533 Rev. B 3 www.fairchildsemi.com FGPF4533 330V, PDP Trench IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter TC = 125 C o Figure 8. Capacitance Characteristics 2400 2000 Capacitance [pF] Common Emitter VGE = 0V, f = 1MHz TC = 25 C o Collector-Emitter Voltage, VCE [V] 16 1600 Cies 12 50A 1200 800 400 0 0.1 Coes Cres 8 30A 4 IC = 20A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 1 10 Collector-Emitter Voltage, VCE [V] 30 Figure 9. Gate charge Characteristics 15 Common Emitter o Figure 10. SOA Characteristics 500 Gate-Emitter Voltage, VGE [V] TC = 25 C 100 Collector Current, Ic [A] 10μs 100μs 1ms 10 ms DC 12 VCC = 100V 200V 10 9 6 1 Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature 3 0.1 0 0 15 30 Ga.


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