Document
FGPF4533 330V, PDP Trench IGBT
August 2010
FGPF4533 330V, PDP IGBT
Features
• High current capability • Low saturation voltage: VCE (sat) =1.55 V @ IC = 50 A • High input impedance • Fast switching • RoHS compliant
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
Applications
• PDP System
GC E
TO-220F
(Retractable)
Absolute Maximum Ratings
Symbol
VCES VGES IC pulse(1)* PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 25oC @ TC = 100 C
o
Ratings
330 ± 30 200 28.4 11.4 -55 to +150 -55 to +150 300
Units
V V A W W
o o o
C C C
Thermal Characteristics
Symbol
RθJC(IGBT) RθJA
Notes: (1) Half Sine Wave, D < 0.01, pluse width < 5μsec * Ic_pluse limited by max Tj
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
-
Max.
4.4 62.5
Units
o o
C/W C/W
©2010 Fairchild Semiconductor Corporation FGPF4533 Rev. B
1
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Free Datasheet http://www.datasheet4u.com/
FGPF4533 330V, PDP Trench IGBT
Package Marking and Ordering Information
Device Marking
FGPF4533
Device
FGPF4533TU
Package
TO-220F
Packaging Type
Tube
Qty per Tube
50ea
Max Qty per Box
-
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES ΔBVCES ΔTJ ICES IGES
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250μA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
330 -
0.3 -
100 ±400
V V/oC μA nA
On Characteristics VGE(th) G-E Threshold Voltage IC = 250μA, VCE = VGE IC = 20A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 50A, VGE = 15V, TC = 25oC IC = 50A, VGE = 15V, TC = 125oC Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 1294 57 41 pF pF pF 2.4 3.3 1.15 1.55 1.6 4.0 1.8 V V V V
Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 200V, IC = 20A VGE = 15V VCC = 200V, IC = 20A, RG = 5Ω, VGE = 15V, Resistive Load, TC = 125oC VCC = 200V, IC = 20A RG = 5Ω, VGE = 15V Resistive Load, TC = 25oC 6 22 40 220 6 24 42 277 44 6 14 ns ns ns ns ns ns ns ns nC nC nC
FGPF4533 Rev. B
2
www.fairchildsemi.com
FGPF4533 330V, PDP Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
200
TC = 25 C
o
Figure 2. Typical Output Characteristics
200
TC = 125 C
o
20V 15V
12V
10V
20V 15V
12V 10V
Collector Current, IC [A]
Collector Current, IC [A]
150
VGE = 8V
150
100
100
VGE = 8V
50
50
0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 6
0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 6
Figure 3. Typical Saturation Voltage Characteristics
200
Common Emitter VGE = 15V
Figure 4. Transfer Characteristics
200
Common Emitter VCE = 10V
Collector Current, IC [A]
Collector Current, IC [A]
150
TC = 25 C TC = 125 C
o
o
150
TC = 25 C TC = 125 C
o
o
100
100
50
50
0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5
0 0 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
1.7
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V 50A
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
Collector-Emitter Voltage, VCE [V]
1.6 1.5 1.4 1.3 1.2 1.1 1.0
TC = 25 C
o
16
12
50A
30A
8
30A
IC = 20A
4
IC = 20A
0
20 40 60 80 100 120 140 o Collector-EmitterCase Temperature, TC [ C]
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGPF4533 Rev. B
3
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FGPF4533 330V, PDP Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter TC = 125 C
o
Figure 8. Capacitance Characteristics
2400 2000
Capacitance [pF]
Common Emitter VGE = 0V, f = 1MHz TC = 25 C
o
Collector-Emitter Voltage, VCE [V]
16
1600
Cies
12
50A
1200 800 400 0 0.1
Coes Cres
8
30A
4
IC = 20A
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
1 10 Collector-Emitter Voltage, VCE [V]
30
Figure 9. Gate charge Characteristics
15
Common Emitter
o
Figure 10. SOA Characteristics
500
Gate-Emitter Voltage, VGE [V]
TC = 25 C
100
Collector Current, Ic [A]
10μs 100μs 1ms 10 ms DC
12
VCC = 100V 200V
10
9
6
1
Single Nonrepetitive Pulse TC = 25oC Curves must be derated linearly with increase in temperature
3
0.1
0
0
15 30 Ga.