Dual N-Channel MOSFET
FDS89161LZ Dual N-Channel Shielded Gate PowerTrench® MOSFET
September 2015
FDS89161LZ
Dual N-Channel Shielded Gate Pow...
Description
FDS89161LZ Dual N-Channel Shielded Gate PowerTrench® MOSFET
September 2015
FDS89161LZ
Dual N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 2.7 A, 105 mΩ
Features
General Description
Shielded Gate MOSFET Technology Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A Max rDS(on) = 160 mΩ at VGS = 4.5 V, ID = 2.1 A High performance trench technology for extremely low rDS(on)
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resisitance and yet maintain superior switching performance. G-S zener has been added to
enhance ESD voltage level.
High power and current handling capability in a widely used surface mount package
CDM ESD protection level > 2KV typical (Note 4)
Application
DC-DC conversion
100% UIL Tested
RoHS Compliant
D2 D2 D1 D1
Pin 1
G2 S2 G1 S1
SO-8
D2 5
D2 6
Q2
D1 7
D1 8
Q1
4 G2 3 S2 2 G1 1 S1
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3) (Note1a)
Ratings 100 ±20 2.7 15 13 31 1.6
-55 to +150
Units V V A mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Therma...
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