N-Channel MOSFET
FDMS8674 N-Channel PowerTrench® MOSFET
November 2007
FDMS8674
N-Channel PowerTrench MOSFET
30V, 21A, 5.0mΩ
Features
...
Description
FDMS8674 N-Channel PowerTrench® MOSFET
November 2007
FDMS8674
N-Channel PowerTrench MOSFET
30V, 21A, 5.0mΩ
Features
Max rDS(on) = 5.0mΩ at VGS = 10V, ID = 17A Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 14A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design RoHS Compliant
®
tm
General Description
The FDMS8674 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
Applications
Computing VR & IMVP Vcore Secondary Side Synchronous Buck POL DC-DC Converter Oring FET / Load Switch
Pin 1 S S D S G D D D D D Power 56 (Bottom View) D 5 6 7 8 4 G
3 S 2 S 1 S
D
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25°C TA = 25°C (Note 1a) (Note 3) TC = 25°C TC = 25°C TA = 25°C (Note 1a) Ratings 30 ±20 21 94 17 150 181 78 2.5 -55 to +150 mJ W °C A Units V V
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.6 50 °C/W
Package Marking and Ordering Information
Device Marking ...
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