N-Channel MOSFET
FDMS86201 N-Channel Shielded Gate PowerTrench® MOSFET
October 2014
FDMS86201
N-Channel Shielded Gate PowerTrench® MOSF...
Description
FDMS86201 N-Channel Shielded Gate PowerTrench® MOSFET
October 2014
FDMS86201
N-Channel Shielded Gate PowerTrench® MOSFET
120 V, 49 A, 11.5 mΩ
Features
General Description
Shielded Gate MOSFET Technology Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
MSL1 robust package design 100% UIL tested RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
Application
DC-DC Conversion
Top
Bottom
Pin 1
S
S
D
S
S
G
S
D
S
D
D
D D
G
D
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Pulsed
TC = 25 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a) (Note 3)
(Note 1a)
Ratings 120 ±20 49 11.6 160 264 104 2.5
-55 to +150
Units V V
A
mJ W °C
RθJC RθJA
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
1.2
(Note 1a)
50
°C/W
Device Marking FDMS86201
Device FD...
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