DatasheetsPDF.com

FDMS86200

Fairchild Semiconductor
Part Number FDMS86200
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Aug 8, 2013
Detailed Description FDMS86200 N-Channel Power Trench® MOSFET November 2012 FDMS86200 N-Channel Power Trench® MOSFET 150 V, 49 A, 18 mΩ Fea...
Datasheet PDF File FDMS86200 PDF File

FDMS86200
FDMS86200

Overview
FDMS86200 N-Channel Power Trench® MOSFET November 2012 FDMS86200 N-Channel Power Trench® MOSFET 150 V, 49 A, 18 mΩ Features „ Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.
6 A „ Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.
8 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application „ DC-DC Conversion Top Bottom Pin 1 S S S S G S S D D D G D D D D D Power 56 MOSF...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)