SIS454DN

N-Channel 20 V (D-S) MOSFET SiS454DN Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0037 at VGS = 10 V 0.0054 at VGS = 4.5 V ID (A)a 35 35 Qg (Typ.) 18.5 nC PowerPAK® 1212-8 3.3 mm S 1S 3.3 mm 2 S 3 G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SiS454DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter - Notebook - POL D G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg Limit 20 ± 20 35a 35a 25b, c 20b, c 100 30 45 35a 3.2b, c 52 33 3.8b, c 2.4b, c - 55 to 150 260 Unit V A mJ A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 24 1.9 Maximum 33 2.4 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c...