SIS444DN

New Product SiS444DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. 0.0033 at VGS = 10 V 0.0043 at VGS = 4.5 V ID (A)f 35 g Qg (Typ.) 33.5 nC 35g Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK® 1212-8 APPLICATIONS Motor Control Industrial Load Switch ORing D G 4 3.30 mm S 1 2 3 S S 3.30 mm D 8 7 6 5 D D D G N-Channel MOSFET Bottom View Ordering Information: SiS444DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 35g 35g 24.9a, b 20a, b 70 35g 3.3a, b 20 20 52 43 3.7a, b 3.1a, b - 55 to 150 260 Unit V A mJ W TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, e Maximum Junction-to-Case (Drain) t  10 s Steady State Symbol RthJA RthJC Typical 24 1.9 Maximum 33 2.4 Unit °C/W Notes: a. Surface mounted o...