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TK9J90E

Toshiba

N-Channel MOSFET


Description
MOSFETs Silicon N-Channel MOS (π-MOS) TK9J90E 1. Applications Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit TK9J90E TO-3P(N) 1: Gate 2: Drai...



Toshiba

TK9J90E

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