UF830Z

UNISONIC TECHNOLOGIES CO., LTD UF830Z 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications, such as switching regulators, switching converters, solenoid, motor drivers and related drivers.  FEATURES * RDS(ON) < 1.5Ω @ ID=2.5A, VGS=10V * Single Pulse Avalanche Energy Rated * Rugged- SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance * ESD Protected  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF830ZL-TF3-T UF830ZG-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F Pin Assignment 123 GDS Packing Tube UF830ZL-TF3-T (1)Packing Type (2)Package Type (3)Green Package (1) T: Tube (2) TF3: TO-220F (3) L: Lead Free, G: Halogen Free and Lead Free  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-612.B UF830Z Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless Otherwise Specified.) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage (TJ=25°C ~125°C) VDS 500 V Drain to Gate Voltage (RGS=20kΩ, TJ=25°C ~125°C) VDGR 500 V Gate to Source Voltage VGS ±30 V Drain Current Continuous Pulsed ID IDM 4.5 A 18 A Power Dissipation (TC = 25°C) PD 38 W Single Pulse Avalanche Energy Rating (Note 2) EAS 300 mJ Junction Temperature TJ +150...