SSD20N15-250D

SSD20N15-250D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 12A, 150V, RDS(ON) 255mΩ RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. TO-252(D-Pack) FEATURES     Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology. A B C D PRODUCT SUMMARY VDS(V) 150 PRODUCT SUMMARY RDS(on) m( 255@VGS= 10V 290@VGS= 5.5V K GE HF ID(A) 12 11  Gate  Drain M J N O P REF.  http://www.DataSheet4U.net/ Source A B C D E F G H Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current b a a UNIT V V A A A W °C °C / W °C / W VDS VGS ID @TC=25℃ IDM IS PD @TC=25℃ TJ, TSTG RθJA RθJC a 150 ±20 12 36 30 50 -55 ~ 175 50 3.0 Continuous Source Current (Diode Conduction) To...