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H9DA4GH4JJAMCR

Hynix

NAND 4Gb(x16) / mobile DDR 4Gb(x32 2CS)

MCP Specification 4Gb (256Mb x16) NAND Flash + 4Gb (64Mb x32 2/CS 2CKE) mobile DDR http://www.DataSheet4U.net/ This doc...


Hynix

H9DA4GH4JJAMCR

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MCP Specification 4Gb (256Mb x16) NAND Flash + 4Gb (64Mb x32 2/CS 2CKE) mobile DDR http://www.DataSheet4U.net/ This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.1 / Mar. 2011 1 datasheet pdf - http://www.DataSheet4U.net/ H9DA4GH4JJAMCR series NAND 4Gb(x16) / mobile DDR 4Gb(x32 2CS) Document Title MCP 4Gb (256Mb x16) NAND Flash / 4Gb (2*64Mb x32 2CS 2CKE) DDR Revision History Revision No. 0.1 1.0 1.1 History Initial Draft - 4Gb NAND Flash D-Die - 4Gb mobile DDR (2 x 2Gb Mobile DDDR A-Die) First version Editorial Change Draft Date Oct. 2010 Nov. 2010 Mar. 2011 Remark Preliminary http://www.DataSheet4U.net/ Rev 1.1 / Mar. 2010 2 datasheet pdf - http://www.DataSheet4U.net/ H9DA4GH4JJAMCR series NAND 4Gb(x16) / mobile DDR 4Gb(x32 2CS) FEATURES [ MCP ] ● Operation Temperature - -30oC ~ 85oC ● Packcage - 137-ball FBGA - 10.5x13.0mm2, 1.2t, 0.8mm pitch - Lead & Halogen Free [ NAND Flash ] ● Multiplane Architecture ● Supply Voltage - Vcc = 1.7 - 1.95 V ● Memory Cell Array - (1K + 32) words x 64 pages x 4096 blocks ● Page Size - (1K+ 32 spare) Words ● Block Size - (64K + 2K spare) Words ● Page Read / Program - Random access : 25us (max.) - Sequential access : 45ns (min.) - Page program time : 250us (typ.) - Multi-page program time (2 pages) : 250us (typ.) ● COPY BACK PROGRAM - Automatic block download without latency time ● FAS...




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