BLF2425M7L140; BLF2425M7LS140
Power LDMOS transistor
Rev. 3 — 6 September 2012 Product data sheet
1. Product profile
1....
BLF2425M7L140; BLF2425M7LS140
Power LDMOS
transistor
Rev. 3 — 6 September 2012 Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power
transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions
Table 1. Typical performance Typical RF performance at Tcase = 25 C; IDq = 1300 mA in a common source class-AB production test circuit. Test signal CW f (MHz) 2450 VDS (V) 28 PL(AV) (W) 140 Gp (dB) 18.5 D (%) 52
1.2 Features and benefits
http://www.DataSheet4U.net/
High efficiency High power gain Excellent ruggedness Excellent thermal stability Integrated ESD protection Designed for broadband operation (2400 MHz to 2500 MHz) Internally matched Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications
Industrial, scientific and medical applications in the frequency range from 2400 MHz to 2500 MHz
datasheet pdf - http://www.DataSheet4U.net/
NXP Semiconductors
BLF2425M7L(S)140
Power LDMOS
transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
Graphic symbol
BLF2425M7L140 (SOT502A)
1 3 2 2 3
sym112
1
BLF2425M7LS140 (SOT502B) 1 2 3 drain gate source
[1]
1 3 2 2
1
3
sym112
[1]
Connected to flange.
3....