NGTB25N120IHLWG

NGTB25N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage. Features http://onsemi.com Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Optimized for Low Case Temperature in IH Cooker Application Low Gate Charge These are Pb−Free Devices 25 A, 1200 V VCEsat = 1.85 V Eoff = 0.8 mJ C Typical Applications Inductive Heating Consumer Appliances Soft Switching ABSOLUTE MAXIMUM RATINGS Rating Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C Diode pulsed current, Tpulse limited by TJmax Gate−emitter voltage Power Dissipation @ TC = 25°C @ TC = 100°C Operating junction temperature range Storage temperature range Lead temperature for soldering, 1/8” from case for 5 seconds Symbol VCES IC Value 1200 50 25 200 Unit http://www.DataSheet4U.net/ G E V A G C E TO−247 CASE 340L STYLE 4 ICM IF A A MARKING DIAGRAM 50 25 200 $20 192 77 −55 to +150 −55 to +150 260 IFM VGE PD A V W 25N120IHL AYWWG TJ Tstg T...