Naina Semiconductor Ltd.
Features
• • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR60045CT thru MBR600100CTR
Silicon Schottky Diode, 600A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 100 oC TC = 25 oC tp = 8.3 ms Conditions MBR60045CT (R) 45 32 45 600 MBR60060CT MBR60080CT (R) (R) 60 42 60 600 80 56 80 600 MBR600100C T(R) 100 70 100 600 Units V V V A
IFSM
4000
http://www.DataSheet4U.net/
4000
4000
4000
A
Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 300 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR60045CT (R) 0.75 1 20 MBR60060CT (R) 0.85 1 20 MBR60080CT (R) 0.88 1 20 MBR600100C T(R) 0.88 1 mA 20 Units V
DC reverse current
IR
Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range Symbol RthJ-C TJ , Tstg MBR60045CT (R) 0.12 - 40 to +165 MBR60060CT (R) 0.12 - 40 to +165 MBR60080CT (R) 0.12 - 40 to +165 MBR600100C T(R) 0.12 - 40 to +165 Units
o
C/W
o
C
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
Naina Semiconductor Ltd.
Package Outline
MBR60045CT thru MBR600100CTR
http://www.DataSheet4U.net/
ALL DIMENSIONS IN MM
Ordering Table
MBR 1 600 2 45 3 CT 4
1 – Device Type > MBR = Schottky Barrier Diode Module 2 – Current Rating = IF(AV) 3 – Voltage = VRRM 4 – Polarity > CT = Normal (Cathode to Base) > CTR = Reverse (Anode to Base)
2
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
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