Naina Semiconductor Ltd.
Features
• • • • Guard Ring Protection Low forward voltage drop High surge current capability U...
Naina Semiconductor Ltd.
Features
Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR30045CT thru MBR300100CTR
Silicon
Schottky Diode, 300A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 140 oC TC = 25 oC tp = 8.3 ms Conditions MBR30045CT (R) 45 32 45 300 MBR30060CT MBR30080CT (R) (R) 60 42 60 300 80 56 80 300 MBR300100C T(R) 100 70 100 300 Units V V V A
IFSM
2500
http://www.DataSheet4U.net/
2500
2500
2500
A
Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 150 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR30045CT (R) 0.68 8 200 MBR30060CT (R) 0.76 8 200 MBR30080CT (R) 0.88 8 200 MBR300100C T(R) 0.88 8 mA 200 Units V
DC reverse current
IR
Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range Symbol RthJ-C TJ , Tstg MBR30045CT (R) 0.4 - 40 to +175 MBR30060CT (R) 0.4 - 40 to +175 MBR30080CT (R) 0.4 - 40 to +175 MBR300100C T(R) 0.4 - 40 to +175 Units
o
C/W
o
C
1
D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653
[email protected] www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
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