Naina Semiconductor Ltd.
Features
• • • • Guard Ring Protection Low forward voltage drop High surge current capability U...
Naina Semiconductor Ltd.
Features
Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR20045CT thru MBR200100CTR
Silicon
Schottky Diode, 200A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 135 oC TC = 25 oC tp = 8.3 ms Conditions MBR20045CT (R) 45 32 45 200 MBR20060CT MBR20080CT (R) (R) 60 42 60 200 80 56 80 200 MBR200100C T(R) 100 70 100 200 Units V V V A
IFSM
1500
http://www.DataSheet4U.net/
1500
1500
1500
A
Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 100 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR20045CT (R) 0.68 5 200 MBR20060CT (R) 0.76 5 200 MBR20080CT (R) 0.88 5 200 MBR200100C T(R) 0.88 5 mA 200 Units V
DC reverse current
IR
Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range Symbol RthJ-C TJ , Tstg MBR20045CT (R) 0.5 - 40 to +175 MBR20060CT (R) 0.5 - 40 to +175 MBR20080CT (R) 0.5 - 40 to +175 MBR200100C T(R) 0.5 - 40 to +175 Units
o
C/W
o
C
1
D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653
[email protected] www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
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