MBR12035CTR

Naina Semiconductor Ltd. Features Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR12020CT thru MBR12040CTR Silicon Schottky Diode, 120A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 140 oC TC = 25 oC tp = 8.3 ms Conditions MBR12020CT (R) 20 14 20 120 MBR12030CT MBR12035CT (R) (R) 30 21 30 120 35 25 35 120 MBR12040CT (R) 40 28 40 120 Units V V V A IFSM 800 http://www.DataSheet4U.net/ 800 800 800 A Electrical Characteristics (TJ = 25oC unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 60 A TJ = 25 oC VR = 20 V TJ = 25 oC VR = 20 V TJ = 125oC MBR12020CT (R) 0.68 3 200 MBR12030CT (R) 0.68 3 200 MBR12035CT (R) 0.68 3 200 MBR12040CT (R) 0.68 3 mA 200 Units V DC reverse current IR Thermal Characteristics (TJ = 25oC unless otherwise specified) Parameter Thermal resistance junction to case Operating, storage temperature range Symbol RthJ-C TJ , Tstg MBR12020CT (R) 0.8 - 40 to +175 MBR12030CT (R) 0.8 - 40 to +175 MBR12035CT (R) 0.8 - 40 to +175 MBR12040CT (R) 0.8 - 40 to +175 Units o C/W o C 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 [email protected] www.nainasemi.com datasheet pdf - http://www.DataSheet4U.net/ Naina Semic...