MBR8035R

Naina Semiconductor Ltd. Schottky Power Diode, 80A Features Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity MBR8020 thru MBR8040R DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol MBR8020(R) MBR8030(R) MBR8035(R) MBR8040(R) Units Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage TC ≤ 120 C TC = 25oC IF = 80 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC o VRRM VRMS VDC IF IFSM VF 20 14 20 80 1000 http://www.DataSheet4U.net/ 30 21 30 80 1000 0.65 5 250 35 25 35 80 1000 0.65 5 250 40 28 40 80 1000 0.65 5 V V V A A V 0.65 5 Reverse current IR 250 250 mA Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted) Parameters Symbol MBR8020(R) MBR8030(R) MBR8035(R) MBR8040(R) Units o Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non-lubricated threads) Approximate allowable weight Rth(JC) TJ Tstg F W 1.0 -65 to 150 -65 to 175 4.0 17.0 C/W o o C C Nm g 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 [email protected] www.nainasemi.com datasheet pdf - http://www.DataSheet4U.net/ Naina Semiconductor Ltd. Package Outline MBR8020 thru MBR8040R http://www.DataSheet4U.net/ ALL DIMENSIONS ...