Naina Semiconductor Ltd.
Schottky Power Diode, 80A
Features
• • • • • Fast Switching Low forward voltage drop High surge...
Naina Semiconductor Ltd.
Schottky Power Diode, 80A
Features
Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity
MBR8020 thru MBR8040R
DO-203AB (DO-5)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter Test Conditions Symbol MBR8020(R) MBR8030(R) MBR8035(R) MBR8040(R) Units
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage TC ≤ 120 C TC = 25oC IF = 80 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC
o
VRRM VRMS VDC IF IFSM VF
20 14 20 80 1000
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30 21 30 80 1000 0.65 5 250
35 25 35 80 1000 0.65 5 250
40 28 40 80 1000 0.65 5
V V V A A V
0.65 5
Reverse current
IR 250 250
mA
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)
Parameters Symbol MBR8020(R) MBR8030(R) MBR8035(R) MBR8040(R) Units
o
Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non-lubricated threads) Approximate allowable weight
Rth(JC) TJ Tstg F W
1.0 -65 to 150 -65 to 175 4.0 17.0
C/W
o o
C C
Nm
g
1
D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653
[email protected] www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
Naina Semiconductor Ltd.
Package Outline
MBR8020 thru MBR8040R
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ALL DIMENSIONS ...