Naina Semiconductor Ltd.
Schottky Power Diode, 60A
Features
• • • • • Fast Switching Low forward voltage drop High surge...
Naina Semiconductor Ltd.
Schottky Power Diode, 60A
Features
Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity
MBR6020 thru MBR6040R
DO-203AB (DO-5)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter Test Conditions Symbol MBR6020(R) MBR6030(R) MBR6035(R) MBR6040(R) Units
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage TC ≤ 100 C TC = 25oC IF = 60 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC
o
VRRM VRMS VDC IF IFSM VF
20 14 20 60 700
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30 21 30 60 700 0.65 5 150
35 25 35 60 700 0.65 5 150
40 28 40 60 700 0.65 5
V V V A A V
0.65 5
Reverse current
IR 150 150
mA
Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted)
Parameters Symbol MBR6020(R) MBR6030(R) MBR6035(R) MBR6040(R) Units
o
Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non-lubricated threads) Approximate allowable weight
Rth(JC) TJ Tstg F W
1.0 -65 to 150 -65 to 175 4.0 17.0
C/W
o o
C C
Nm
g
1
D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653
[email protected] www.nainasemi.com
datasheet pdf - http://www.DataSheet4U.net/
Naina Semiconductor Ltd.
Package Outline
MBR6020 thru MBR6040R
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ALL DIMENSIONS IN M...