STW57N65M5-4

STW57N65M5-4 N-channel 650 V, 0.056 Ω typ., 42 A, MDmesh™ V Power MOSFET in a TO247-4 package Datasheet − production data Features Order code STW57N65M5-4 VDS @ TJmax 710 V RDS(on) max 0.063 Ω ID 42 A Higher VDS rating 1 2 4 3 Higher dv/dt capability Excellent switching performance thanks to the extra driving source pin Easy to drive 100% avalanche tested TO247-4 Figure 1. Internal schematic diagram D(1) Applications High efficiency switching applications: – Servers – PV inverters – Telecom infrastructure – Multi kW battery chargers http://www.DataSheet4U.net/ G(4) Driver source(3) Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. S(2) AM10177v1 Table 1. Device summary Order code STW57N65M5-4 Marking 57N65M5 Package TO247-4 Packaging Tube April 2013 This is information on a product in full production. DocID024559 Rev 1 1/14 www.st.com 14 datasheet pdf - http://www.DataSheet4U.net/ Contents STW57N65M5-4 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . ...