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TK12A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK12A50D
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 ±30 12 48 45 364 12 4.5 150 -55 to 150
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Unit V V A W mJ A mJ °C °C
1: Gate 2: Drain 3: Source
Pulse (t = 1 ms) (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― SC-67 2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2 Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit °C/W °C/W 1
Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = 90 V, Tch = 25°C(initial), L = 4.3 mH, RG = 25 Ω, IAR = 12 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
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2008-09-10
datasheet pdf - http://www.DataSheet4U.net/
TK12A50D
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD ≈ 400 V, VGS = 10 V, ID = 12 A Duty ≤ 1%, tw = 10 μs Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton 10 V VGS 0V 50 Ω ID = 6 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 6 A VDS = 10 V, ID = 6 A Min ⎯ ⎯ 500 2.0 ⎯ 1.5 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 0.45 6.0 1350 6 135 22 55 15 100 25 16 9 Max ±1 10 ⎯ 4.0 0.52 ⎯ ⎯ ⎯ pF Unit μA μA V V Ω S
⎯ ⎯ ⎯ ⎯
⎯ ⎯ ⎯ ⎯
⎯ ⎯ ⎯
ns
RL = 33 Ω
VDD ≈ 200 V
⎯ ⎯
⎯ ⎯ ⎯ nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
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Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1)
Symbol IDR IDRP VDSF trr Qrr
Test Condition ⎯ ⎯ IDR = 12 A, VGS = 0 V IDR = 12 A, VGS = 0 V, dIDR/dt = 100 A/μs
Min ⎯ ⎯ ⎯ ⎯ ⎯
Typ. ⎯ ⎯ ⎯ 1300 12
Max 12 48 −1.7 ⎯ ⎯
Unit A A V ns μC
Marking
K12A50D
Part No. (or abbreviation code) Lot No. A line indicates Lead(Pb)-Fee Finish.
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2008-09-10
datasheet pdf - http://www.DataSheet4U.net/
TK12A50D
ID – VDS
10
COMMON SOURCE Tc = 25°C
ID – VDS
20 10, 8 7.5 7 16 6.75 12 6.5 6.5 6.25 COMMON SOURCE Tc = 25°C PULSE TEST
8, 7
(A)
8
DRAIN CURRENT ID
6
6
DRAIN CURRENT ID
10
(A)
PULSE TEST
4 5.5 2
8
6
5 VGS = 4.5V
4
5.5 VGS = 5 V
0 0
2
4
6
8
10
0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE
VDS
(V)
DRAIN-SOURCE VOLTAGE
VDS
(V)
ID – VGS
COMMON SOURCE VDS = 20 V 20 PULSE TEST
VDS – VGS VDS (V)
10 COMMON SOURCE Tc = 25℃ PULSE TEST
24
(A)
8
DRAIN CURRENT ID
DRAIN-SOURCE VOLTAGE
16
6
ID = 12 A
12
4 6 2 3
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8
100 Tc = −55°C 25
4
0 0
2
4
6
8
10
0 0
4
8
12
16
20
GATE-SOURCE VOLTAGE
VGS
(V)
GATE-SOURCE VOLTAGE
VGS
(V)
⎪Yfs⎪ – ID FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S)
100 10
RDS (ON) – ID DRAIN-SOURCE ON-RESISTANCE RDS (ON) (Ω)
COMMON SOURCE Tc = 25°C PULSE TEST
COMMON SOURCE VDS = 20 V PULSE TEST Tc = −55°C
10
1 VGS = 10 V、15 V
25 100 1
0.1 0.1
1
10
100
0.1 0.1
1
10
100
DRAIN CURRENT ID
(A)
DRAIN CURRENT ID
(A)
3
2008-09-10
datasheet pdf - http://www.DataSheet4U.net/
TK12A50D
RDS (ON) – Tc
2.5 100 COMMON SOURCE PULSE TEST 2.0
IDR – VDS
COMMON SOURCE Tc = 25°C PULSE TEST
DRAIN-SOURCE ON-RESISTANCE RDS (ON) (Ω)
DRAIN REVERSE CURRENT IDR (A)
10
1.5
ID = 12 A 6 3
1.0 VGS = 10 V 0.5
1 10 5 3 1 VGS = 0, −1 V −0.8 −1.0 −1.2 −1.4
0 −80
−40
0.1 0 40 80 120 160
0
−0.2
−0.4.