DatasheetsPDF.com

K12A50D Dataheets PDF



Part Number K12A50D
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description TK12A50D
Datasheet K12A50D DatasheetK12A50D Datasheet (PDF)

TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID I.

  K12A50D   K12A50D



Document
TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A50D Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 ±30 12 48 45 364 12 4.5 150 -55 to 150 http://www.DataSheet4U.net/ Unit V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10U1B Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit °C/W °C/W 1 Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = 90 V, Tch = 25°C(initial), L = 4.3 mH, RG = 25 Ω, IAR = 12 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 3 1 2008-09-10 datasheet pdf - http://www.DataSheet4U.net/ TK12A50D Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD ≈ 400 V, VGS = 10 V, ID = 12 A Duty ≤ 1%, tw = 10 μs Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton 10 V VGS 0V 50 Ω ID = 6 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 6 A VDS = 10 V, ID = 6 A Min ⎯ ⎯ 500 2.0 ⎯ 1.5 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 0.45 6.0 1350 6 135 22 55 15 100 25 16 9 Max ±1 10 ⎯ 4.0 0.52 ⎯ ⎯ ⎯ pF Unit μA μA V V Ω S ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns RL = 33 Ω VDD ≈ 200 V ⎯ ⎯ ⎯ ⎯ ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) http://www.DataSheet4U.net/ Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 12 A, VGS = 0 V IDR = 12 A, VGS = 0 V, dIDR/dt = 100 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 1300 12 Max 12 48 −1.7 ⎯ ⎯ Unit A A V ns μC Marking K12A50D Part No. (or abbreviation code) Lot No. A line indicates Lead(Pb)-Fee Finish. 2 2008-09-10 datasheet pdf - http://www.DataSheet4U.net/ TK12A50D ID – VDS 10 COMMON SOURCE Tc = 25°C ID – VDS 20 10, 8 7.5 7 16 6.75 12 6.5 6.5 6.25 COMMON SOURCE Tc = 25°C PULSE TEST 8, 7 (A) 8 DRAIN CURRENT ID 6 6 DRAIN CURRENT ID 10 (A) PULSE TEST 4 5.5 2 8 6 5 VGS = 4.5V 4 5.5 VGS = 5 V 0 0 2 4 6 8 10 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ID – VGS COMMON SOURCE VDS = 20 V 20 PULSE TEST VDS – VGS VDS (V) 10 COMMON SOURCE Tc = 25℃ PULSE TEST 24 (A) 8 DRAIN CURRENT ID DRAIN-SOURCE VOLTAGE 16 6 ID = 12 A 12 4 6 2 3 http://www.DataSheet4U.net/ 8 100 Tc = −55°C 25 4 0 0 2 4 6 8 10 0 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE VGS (V) ⎪Yfs⎪ – ID FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) 100 10 RDS (ON) – ID DRAIN-SOURCE ON-RESISTANCE RDS (ON) (Ω) COMMON SOURCE Tc = 25°C PULSE TEST COMMON SOURCE VDS = 20 V PULSE TEST Tc = −55°C 10 1 VGS = 10 V、15 V 25 100 1 0.1 0.1 1 10 100 0.1 0.1 1 10 100 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 3 2008-09-10 datasheet pdf - http://www.DataSheet4U.net/ TK12A50D RDS (ON) – Tc 2.5 100 COMMON SOURCE PULSE TEST 2.0 IDR – VDS COMMON SOURCE Tc = 25°C PULSE TEST DRAIN-SOURCE ON-RESISTANCE RDS (ON) (Ω) DRAIN REVERSE CURRENT IDR (A) 10 1.5 ID = 12 A 6 3 1.0 VGS = 10 V 0.5 1 10 5 3 1 VGS = 0, −1 V −0.8 −1.0 −1.2 −1.4 0 −80 −40 0.1 0 40 80 120 160 0 −0.2 −0.4.


TK12A50D K12A50D MD75xx


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)