PJU1N60

PJU1N60 600V N-Channel Enhancement Mode MOSFET FEATURES 1A, 600V, RDS(ON)=11Ω@VGS=10V, ID=0.5A Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives T O- 25 1 TO -2 5 1 G 1 D S3 2 MECHANICAL DATA Case: TO-220AB / TO-251 Molded Plastic Terminals : Solderable per MIL-STD-750,Method 2026 INTE RNA L S CHE M ATIC DIA GRA M 2 Drain ORDERING INFORMATION TYPE PJU1N60 1 Gate MARKING U1N60 PACKAGE TO-251 PACKING 3 80PCS/TUBE S ource Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) http://www.DataSheet4U.net/ PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA P J U1 N6 0 600 +3 0 1 4 .6 28 0 .2 2 -5 5 to +1 5 0 58 4 .5 100 Uni ts V V A A W O Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e C Avalanche Energy with Single Pulse IAS=1.1A, VDD=50V, L=95mH mJ O Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance C /W C /W O Note : 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE April 12,2010-REV.00 PAGE . 1 datas...