SIR872ADP

SiR872ADP Vishay Siliconix N-Channel 150 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 150 RDS(on) () Max. 0.0180 at VGS = 10 V 0.0230 at VGS = 7.5 V ID (A)g 53.7 45 Qg (Typ.) 22.8 nC FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® SO-8 APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm Fixed Telecom DC/DC Converter Primary and Secondary Side Switch D G Bottom View Ordering Information: SiR872ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage http://www.DataSheet4U.net/ Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 150 ± 20 53.7 43 12.8b, c 10.2b, c 100 60a 5.6b, c 30 45 104 66.6 6.25b, c 4b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L =0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e IDM IS IAS EAS A mJ Maximum Power Dissipation PD W TJ, Tstg °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit RthJA t  10 s 15 20 Maximum Junction-to-Ambientb, f °C/W RthJC Maximum Junction-to-Case (Drain) Steady State 0...