SBP13009-O

datasheet pdf - http://www.DataSheet4U.net/ http://www.DataSheet4U.net/ 09-O SBP130 300 h Vol tage Fast-Sw itching NP N Power Tra nsisto r Hig igh olt -Swi NPN ran tor tures Fea eat ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA B rip tion General Desc scrip ript This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. C E TO220 um Ratin gs Absolute Maxim imu ing Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at TC = 25℃ Operation Junction Temperature Storage Temperature tP = 5ms Test Conditions VBE = 0 IB = 0 IC = 0 Value 700 400 9.0 12 25 6.0 12 100 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ Thermal Characteristics Symbol RθJc RθJA Parameter Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient Value 1.25 40 Units ℃/W ℃/W Jan 2008. Rev. 0 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. T01-3 datasheet pdf - http://www.DataSheet4U.net/ http://www.DataSheet4U.net/ 09-O SBP130 300 tr ical Ch arac teri sti cs (TC=25℃ unless otherwise noted) Elec ectr tri Cha act ris tics Value Parameter Test Conditions Min 400 Typ Max 1.0 1.5 3.0 2.0 1.2 1.6 1.5 1.0 5.0 40 40 V V Symbol VCEO(sus) Units V Collector-Emitter Breakdown Voltage Ic=10mA,Ib=...