0.6-1.2 GHz High Linearity
DATA SHEET
SKY67021-396LF: 0.6-1.2 GHz High Linearity, Active Bias Low-Noise Amplifier
Applications
• GSM, CDMA, WCDMA,...
Description
DATA SHEET
SKY67021-396LF: 0.6-1.2 GHz High Linearity, Active Bias Low-Noise Amplifier
Applications
GSM, CDMA, WCDMA, TD-SCDMA cellular infrastructure Ultra low-noise systems Balanced, single-ended low-noise amplifier designs
Features
Extended operating temperature range: –40 °C to +100 °C Low Noise Figure: 0.6 dB @ 0.9 GHz Excellent IIP3 performance: +22.5 dBm @ 0.9 GHz Gain: 17.5 dB @ 0.9 GHz Adjustable supply current Integrated enable circuitry Temperature and process-stable active bias Miniature DFN (8-pin, 2 x 2 mm) package (MSL1 @ 260 °C per JEDEC J-STD-020)
Figure 1. SKY67021-396LF Block Diagram
Description
The SKY67021-396LF is GaAs, pHEMT Low-Noise Amplifier (LNA) with an active bias and high linearity performance. The advanced GaAs pHEMT enhancement mode process provides good return loss, low noise, and high linearity performance.
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The internal active bias circuitry provides stable performance over temperature and process variation. The device offers the ability to externally adjust supply current and gain. Supply voltage is applied to the RFOUT/VDD pin through an RF choke inductor. Pin 3 (VBIAS) should be connected to RFOUT/VDD through an external resistor to control the supply current. The RFIN and RFOUT/VDD pins should be DC blocked to ensure proper operation. The SKY67021-396LF operates in the frequency range of 0.6 to 1.2 GHz. For higher frequency operation, the pin-compatible SKY67022-396LF or SKY67023-396LF...
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