SI7900AEDN

Si7900AEDN New Product Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.026 @ VGS = 4.5 V 0.030 @ VGS = 2.5 V 0.036 @ VGS = 1.8 V ID (A) 8.5 8 7 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPakr Package - Low-Thermal Resistance, RthJC - Low 1.07-mm Profile D 3000-V ESD Protection APPLICATIONS D Protection Switch for 1-2 Li-ion Batteries PowerPAK 1212-8 D D 3.30 mm S1 1 2 G1 3 S2 3.30 mm 2.6 kW G1 G2 2.6 kW G2 4 D 8 7 D 6 D 5 D Bottom View Ordering Information: Si7900AEDN-T1 N-Channel http://www.DataSheet4U.net/ S1 N-Channel S2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 20 "12 8.5 6.4 30 2.9 3.1 1.6 Steady State Unit V 6 4.3 A 1.4 1.5 0.79 - 55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72287 S-31418—Rev. A, 07-Jun-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 32 65 2.2 Maximum 40 82 2.8 Unit _C/W 1 datasheet pdf - http://www.DataSheet4U.net/ Si7900AEDN Vishay Siliconix ...