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SSM60T03GS Dataheets PDF



Part Number SSM60T03GS
Manufacturers Silicon Standard
Logo Silicon Standard
Description N-channel Enhancement-mode Power MOSFET
Datasheet SSM60T03GS DatasheetSSM60T03GS Datasheet (PDF)

SSM60T03GP,S N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free, RoHS compliant. D BV DSS R DS(ON) ID 30V 12mΩ 45A G S DESCRIPTION The SSM60T03GS is in a TO-263 package, which is widely used for commercial and industrial surface-mount applications. This device is suitable for low-voltage applications such as DC/DC converters. The through-hole version, the SSM60T03GP in TO-220, is available for vertical-mounting, where a small footprint i.

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SSM60T03GP,S N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free, RoHS compliant. D BV DSS R DS(ON) ID 30V 12mΩ 45A G S DESCRIPTION The SSM60T03GS is in a TO-263 package, which is widely used for commercial and industrial surface-mount applications. This device is suitable for low-voltage applications such as DC/DC converters. The through-hole version, the SSM60T03GP in TO-220, is available for vertical-mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, permitting operation up to a maximum junction temperature of 175°C. G D S TO-263 (S) G ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 http://www.DataSheet4U.net/ D TO-220(P) S Units V V A A A W W/°C Rating 30 ±20 45 32 120 44 0.352 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 175 -55 to 175 °C °C THERMAL DATA Symbol RΘJC RΘJA Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance Junction-ambient Value 3.4 62 Units °C/W °C/W 9/16/2005 Rev.3.1 www.SiliconStandard.com 1 of 5 datasheet pdf - http://www.DataSheet4U.net/ SSM60T03GP,S ELECTRICAL CHARACTERISTICS (at Tj=25°C, unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.03 25 11.6 3.9 7 8.8 57.5 18.5 6.4 200 135 Max. Units 12 25 3 1 250 ±100 19 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF ∆ BV DSS/∆ Tj RDS(ON) Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA Static Drain-Source On-Resistance2 VGS=10V, ID=20A VGS=4.5V, ID=15A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance 2 o VDS=VGS, ID=250uA VDS=10V, ID=10A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= ±20V ID=20A VDS=24V VGS=4.5V VDS=15V ID=20A RG=3.3Ω , VGS=10V RD=0.75Ω VGS=0V VDS=25V http://www.DataSheet4U.net/ Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=175 C) o Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1135 1816 f=1.0MHz Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=45A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/µs Min. - Typ. 23.3 16 Max. Units 1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us, duty cycle <2%. 9/16/2005 Rev.3.1 www.SiliconStandard.com 2 of 5 datasheet pdf - http://www.DataSheet4U.net/ SSM60T03GP,S 125 90 100 T C =25 o C 10V 8.0V ID , Drain Current (A) T C =175 C o 10V 8.0V 6.0V ID , Drain Current (A) 6.0V 75 60 5.0V 30 5.0V 50 25 V G =4.0V V G =4.0V 0 0 0 1 2 3 4 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 2 I D =15A T C =25 ° C 60 1.6 I D =20A V G =10V Normalized R DS(ON) RDS(ON) (m Ω ) 40 1.2 20 http://www.DataSheet4U.net/ 0.8 0 2 4 6 8 10 0.4 -50 25 100 175 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance vs. Junction Temperature 3 100 10 2 1 VGS(th) (V) 1 0 1.5 -50 T j =175 C IS(A) o T j =25 C o 0.1 0 0.5 1 25 100 175 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C ) o Fig 5. Forward Characteristic of Reverse Diode 9/16/2005 Rev.3.1 Fig 6. Gate Threshold Voltage vs. Junction Temperature www.SiliconStandard.com 3 of 5 datasheet pdf - http://www.DataSheet4U.net/ SSM60T03GP,S f=1.0MHz 12 10000 I D =20A VGS , Gate to Source Voltage (V) 9 C (pF) V DS =16V V DS =20V V DS =24V C iss 6 1000 3 C oss C rss 0 0 6 12 18 24 100 1 8 15 22 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor = 0.5 100 0.2 0.1 ID (A) 100us 10 0.1 0.05 PDM 0.02 t T Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 1ms 10ms 100ms DC http://www.DataSheet4U.net/ 0.01 Single Pulse 1 0.1 1 10 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 9/16/2005 Rev.3.1 www.SiliconStandard.com 4 of 5 datasheet pdf - ht.


SSM60T03GP SSM60T03GS AN214


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