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SSM60T03GP,S
N-channel Enhancement-mode Power MOSFET
Low gate-charge Simple drive requirement Fast switching
Pb-free, RoHS compliant.
D
BV DSS R DS(ON) ID
30V 12mΩ 45A
G S
DESCRIPTION
The SSM60T03GS is in a TO-263 package, which is widely used for commercial and industrial surface-mount applications. This device is suitable for low-voltage applications such as DC/DC converters. The through-hole version, the SSM60T03GP in TO-220, is available for vertical-mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, permitting operation up to a maximum junction temperature of 175°C. G D S
TO-263 (S)
G
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1
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D
TO-220(P)
S
Units V V A A A W W/°C
Rating 30 ±20 45 32 120 44 0.352
Total Power Dissipation Linear Derating Factor
TSTG TJ
Storage Temperature Range Operating Junction Temperature Range
-55 to 175 -55 to 175
°C °C
THERMAL DATA
Symbol RΘJC RΘJA Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance Junction-ambient Value 3.4 62 Units °C/W °C/W
9/16/2005 Rev.3.1
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SSM60T03GP,S
ELECTRICAL CHARACTERISTICS (at Tj=25°C, unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 30 1 Typ. 0.03 25 11.6 3.9 7 8.8 57.5 18.5 6.4 200 135 Max. Units 12 25 3 1 250 ±100 19 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
∆ BV DSS/∆ Tj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance2
VGS=10V, ID=20A VGS=4.5V, ID=15A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
2
o
VDS=VGS, ID=250uA VDS=10V, ID=10A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS= ±20V ID=20A VDS=24V VGS=4.5V VDS=15V ID=20A RG=3.3Ω , VGS=10V RD=0.75Ω VGS=0V VDS=25V
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Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=175 C)
o
Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
1135 1816
f=1.0MHz
Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2
Test Conditions IS=45A, VGS=0V IS=20A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 23.3 16
Max. Units 1.3 V ns nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area. 2.Pulse width <300us, duty cycle <2%.
9/16/2005 Rev.3.1
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datasheet pdf - http://www.DataSheet4U.net/
SSM60T03GP,S
125 90
100
T C =25 o C
10V 8.0V ID , Drain Current (A)
T C =175 C
o
10V 8.0V 6.0V
ID , Drain Current (A)
6.0V
75
60
5.0V
30
5.0V
50
25
V G =4.0V
V G =4.0V
0
0 0 1 2 3 4
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
2
I D =15A T C =25 ° C
60 1.6
I D =20A V G =10V Normalized R DS(ON)
RDS(ON) (m Ω )
40
1.2
20
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0.8
0 2 4 6 8 10
0.4 -50 25 100 175
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance vs. Junction Temperature
3
100
10
2
1
VGS(th) (V)
1 0 1.5 -50
T j =175 C IS(A)
o
T j =25 C
o
0.1 0 0.5 1
25
100
175
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( C )
o
Fig 5. Forward Characteristic of Reverse Diode
9/16/2005 Rev.3.1
Fig 6. Gate Threshold Voltage vs. Junction Temperature
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SSM60T03GP,S
f=1.0MHz
12
10000
I D =20A VGS , Gate to Source Voltage (V)
9
C (pF)
V DS =16V V DS =20V V DS =24V
C iss
6
1000
3
C oss C rss
0 0 6 12 18 24
100
1
8
15
22
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
100
0.2
0.1
ID (A)
100us
10
0.1
0.05
PDM
0.02
t T
Duty Factor = t/T Peak Tj = PDM x Rthjc + T C
1ms 10ms 100ms DC
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0.01 Single Pulse
1 0.1 1 10 100
0.01 0.00001 0.0001 0.001 0.01 0.1 1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 4.5V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
9/16/2005 Rev.3.1
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