IDW16G65C5

SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW16G65C5 Final Datasheet Rev. 2.2, 2013-01-15 Power Management & Multimarket 5th Generation thinQ!™ SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range. Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant  Qualified according to JEDEC1) for target applications  Breakdown voltage tested at 35 mA2)  Optimized for high temperature operation Benefits  System efficiency improvement over Si diodes  System cost / size savings due to reduced cooling requirements  Enabling higher frequency / increased power density solutions  Higher system reliability due to lower operating temperatures  Reduced EMI Applications  Switch mode power supply  Power factor correction  Solar inverter  Uninterruptible power supply ...