P1203BV

P1203BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 12mΩ @VGS = 10V ID 11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation 1,2 http://www.DataSheet4U.net/ SYMBOL VDS VGS LIMITS 30 ±20 11 7 40 28 40 2.5 1 -55 to 150 UNITS V TA = 25 ° C TA = 100 ° C ID IDM IAS A L = 0.1mH TA = 25 ° C TA = 100 ° C EAS PD TJ, TSTG mJ W ° C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 SYMBOL RqJC RqJA TYPICAL MAXIMUM 25 50 UNITS ° C/W Pulse width limited by maximum junction temperature. Limited only by maximum temperature allowed Ver 1.0 1 2012/4/13 datasheet pdf - http://www.DataSheet4U.net/ P1203BV N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge 2 2 LIMITS MIN 30 1 1.8 3 ±100 1 10 70 14 8.5 40 846 17.5 12 TYP MAX UNIT V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs Ciss Coss Crss Rg Qg Qgs Qgd td(on)...