N-Channel Enhancement Mode MOSFET
P1203BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V RDS(ON) 12mΩ @VGS = 10V ID 11A
SOP- 08
ABSOLUTE...
Description
P1203BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 30V RDS(ON) 12mΩ @VGS = 10V ID 11A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation
1,2
http://www.DataSheet4U.net/
SYMBOL VDS VGS
LIMITS 30 ±20 11 7 40 28 40 2.5 1 -55 to 150
UNITS V
TA = 25 ° C TA = 100 ° C
ID IDM IAS
A
L = 0.1mH TA = 25 ° C TA = 100 ° C
EAS PD TJ, TSTG
mJ W ° C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient
1 2
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 25 50
UNITS ° C/W
Pulse width limited by maximum junction temperature. Limited only by maximum temperature allowed
Ver 1.0
1
2012/4/13
datasheet pdf - http://www.DataSheet4U.net/
P1203BV
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge
2 2
LIMITS MIN 30 1 1.8 3 ±100 1 10 70 14 8.5 40 846 17.5 12 TYP MAX
UNIT
V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs Ciss Coss Crss Rg Qg Qgs Qgd td(on)...
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