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NTLUS4930N

ON Semiconductor

Power MOSFET

NTLUS4930N MOSFET – Power, Single, N-Channel, mCool, UDFN6, 2.0x2.0x0.55 mm 30 V, 6.1 A Features • UDFN Package with E...


ON Semiconductor

NTLUS4930N

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Description
NTLUS4930N MOSFET – Power, Single, N-Channel, mCool, UDFN6, 2.0x2.0x0.55 mm 30 V, 6.1 A Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications Battery Switch Power Load Switch DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Continuous Drain Current (Note 1) Steady State t≤5s Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C VDSS VGS ID PD 30 ±20 6.1 4.4 9.3 1.65 V V A W t ≤ 5 s TA = 25°C 3.8 Continuous Drain Current (Note 2) Steady State TA = 25°C TA = 85°C ID 3.8 A 2.8 Power Dissipation (Note 2) TA = 25°C PD 0.65 W Pulsed Drain Current tp = 10 ms IDM 19 A MOSFET Operating Junction and Storage Temperature TJ, TSTG -55 to 150 °C Source Current (Body Diode) (Note 1) IS 1.65 A Lead Temperature for Soldering Purposes TL 260 °C (1/8″ from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the R...




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