Document
SSM9685M
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Simple drive requirement Lower gate charge Fast switching characteristics
D D D
D
BV DSS R DS(ON) ID
G
80V 45mΩ 5.3A
SO-8
S
S
S
Description
Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SSM9685M is in the SO-8 package, which is widely preferred for commercial and industrial surface-mount applications, and is well suited for low-voltage applications such as DC/DC converters.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID @ TA=25°C ID @ TA=100°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
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Rating 80 ± 20 5.3 3.4 50 2.5 0.02 -55 to 150 -55 to 150
Units V V A A A W W/°C °C °C
Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 50
Unit °C/W
8/21/2004 Rev.2.01
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SSM9685M
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 80 1 Typ. 0.073 9 19 5 10 11 6 36 22 135 98 Max. Units 45 50 3 1 25 ±100 30 V V/°C mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
∆ BV DSS/∆ Tj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance2
VGS=10V, ID=5.3A VGS=4.5V, ID=3.0A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C)
o o
VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=80V, VGS=0V VDS=64V, VGS=0V VGS= ± 20V ID=5A VDS=64V VGS=4.5V VDS=40V ID=1A RG=3.3Ω ,VGS=10V RD=40Ω VGS=0V VDS=25V
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Gate-Source Leakage Total Gate Charge
2
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
1710 2730
f=1.0MHz
Source-Drain Diode
Symbol VSD Parameter Forward On Voltage
2
Test Conditions IS=2A, VGS=0V IS=5A, VGS=0V, dI/dt=100A/µs
Min. -
Typ. 42 84
Max. Units 1.2 V ns nC
trr
Qrr
Reverse Recovery Time Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125°C/W when mounted on min. copper pad.
8/21/2004 Rev.2.01
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SSM9685M
70
50
60
T A =25 C
o
ID , Drain Current (A)
50
ID , Drain Current (A)
10V 6.0V 5.0V 4.5V
T A =150 C
40
o
10V 6.0V 5.0V 4.5V
30
40
30
20
V G = 3.0 V
10
20
V G =3.0V
10
0 0.0 2.0 4.0 6.0 8.0 10.0
0
0
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
47.50
2.2
45.00
ID=5A T A =25°C Normalized R DS(ON)
2.0
1.8
I D =5.3A V G =10V
RDS(ON) (mΩ )
1.6
42.50
1.4
1.2
40.00
1.0
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0.8 37.50 0.6
35.00 2 4 6 8 10 12
0.4 -50 0 50 100 150
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
o
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance vs. Junction Temperature
2.5
5
4
2
IS(A)
3
T j =150 o C
2
T j =25 o C
VGS(th) (V)
1.2
1.5
1
1
0
0.5 0 0.2 0.4 0.6 0.8 1 -50 0 50 100 150
V SD , Source-to-Drain Voltage (V)
T j , Junction Temperature ( o C)
Fig 5. Forward Characteristic of Reverse Diode
8/21/2004 Rev.2.01
Fig 6. Gate Threshold Voltage vs. Junction Temperature
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SSM9685M
16
f=1.0MHz
10000
I D= 5 A VGS , Gate to Source Voltage (V) C iss
12
8
C (pF)
V DS = 40 V V DS = 50 V V DS = 64 V
1000
C oss
100
4
C rss
0
10 0 10 20 30 40 50 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
0.2 0.1 0.05
100us ID (A) 1ms
1
0.1
0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 125℃/W
10ms 100ms
0.1
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T A =25 o C Single Pulse
1s DC
10 100 1000
0.01 0.1 1
0.001 0.0001 0.001 0.01 0.1 1 10 100 1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VDS 90%
VG QG 4.5V QGS QGD
10% VGS td(on) tr td(off) tf Charge Q
Fig 11. Switching Time Waveform
8/21/2004 Rev.2.01
Fig 12. Gate Charge Waveform
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