SIB456DK

New Product SiB456DK www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () MAX. 0.185 at VGS = 10 V 0.310 at VGS = 4.5 V ID (A)a 6.3 4.9 Qg (Typ.) 1.8 nC FEATRUES TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK SC-75-6L-Single 1 D 2 D 3 6 D 5 D S 4 S G APPLICATIONS DC/DC Converters Full-Bridge Converters For Power Bricks and POL Power Marking Code D 1.60 mm 1.60 mm AJX Part # code XXX Lot Traceability and Date code G S N-Channel MOSFET Ordering Information: SiB456DK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C http://www.DataSheet4U.net/ Symbol VDS VGS Limit 100 ± 20 6.3 5 2.7b, c 2.2b, c 7 6.3 2b, c 2.4 0.29 13 8.4 2.4b, c 1.6b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg...