N-Channel MOSFET
New Product
SiB406EDK
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) (Ω) 0.046 at VGS...
Description
New Product
SiB406EDK
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) (Ω) 0.046 at VGS = 4.5 V 0.063 at VGS = 2.5 V ID (A)a 6 3.5 nC 6 Qg (Typ.)
FEATURES
Halogen-free According to IEC 61249-2-21 TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area - Low On-Resistance Typical ESD Protection 560 V
APPLICATIONS
PowerPAK SC-75-6L-Single
Load Switch for Portable Applications High Frequency DC/DC Converter
D
1 D 2 D 3 6 D 5 D S 4 S 1.60 mm G ADX Part # code XXX Lot Traceability and Date code
Marking Code
G
1.60 mm
S
Ordering Information: SiB406EDK-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
http://www.DataSheet4U.net/
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Continuous Source-Drain Diode Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Symbol VDS VGS ID IDM IS
PD TJ, Tstg
Limit 20 ± 12 6a 6a 5.1b, c 4.1b, c 15 6a 1.6b, c 10 6.4 1.95b, c 1.25b, c - 55 to 150 260
Unit V
A
W
°C
THERMAL RESISTANCE RATINGS
Symbol Typical Maximum Unit t≤5s RthJA 51 64 Maximum Junction-to-Ambientb, f °C/W RthJC 10 12.5 Maximum Junction-to-Case (Drain) Steady State Notes:...
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