2N6394

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6394/D Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. Glass Passivated Junctions with Center Gate Geometry for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 Volts A Motorola preferred devices 2N6394 thru 2N6399 SCRs 12 AMPERES RMS 50 thru 800 VOLTS G K CASE 221A-07 (TO-220AB) STYLE 3 *MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (Gate Open, TJ = –40 to 125°C) 2N6394 2N6395 2N6397 2N6398 2N6399 RMS On–State Current (TC = 90°C) (All Conduction Angles) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C) Circuit Fusing (t = 8.3 ms) Forward Peak Power Forward Average Gate Power Forward Peak Gate Current Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 50 100 400 600 800 IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg 12 100 40 20 0.5 2 –40 to +125 –40 to +150 Amps Amps A2s Watts Watt Amps °C °C Value Unit Volts THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case *Indicates JEDEC Registered Data. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gat...