TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/523 Devices 2N6383 2N6384 2N6385 Qual...
TECHNICAL DATA
NPN DARLINGTON POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/523 Devices 2N6383 2N6384 2N6385 Qualified Level JAN, JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
Symbol 2N6383 2N6384 2N6385 Unit
VCEO VCBO VEBO IB IC PT Top, Tstg 40 40 60 60 5.0 0.25 10 6.0 100 -55 to +175 Max. 1.75 80 80 Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W
@ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temperature
THERMAL CHARACTERISTICS
Characteristics Symbol Thermal Resistance Junction-to-Case RθJC 1) Derate linearly 34.2 mW/0C above TA > +250C 2) Derate linearly 571 mW/0C above TC > +250C
TO-3* (TO-204AA)
0
*See Appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 200 mAdc 2N6383 2N6384 2N6385 2N6383 2N6384 2N6385 2N6383 2N6384 2N6385 40 60 80 40 60 80 1.0 1.0 1.0 Vdc
V(BR)CEO
Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBB = 100 Ω
V(BR)CER
Vdc
Collector-Base Cutoff Current VCE = 40 Vdc VCE = 60 Vdc VCE = 80 Vdc
ICBO
mAdc
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120101 Page 1 of 2
2N6383, 2N6384, 2N6385, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 40 Vdc VC...