DatasheetsPDF.com

2N6384 Dataheets PDF



Part Number 2N6384
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description NPN DARLINGTON POWER SILICON TRANSISTOR
Datasheet 2N6384 Datasheet2N6384 Datasheet (PDF)

TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/523 Devices 2N6383 2N6384 2N6385 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol 2N6383 2N6384 2N6385 Unit VCEO VCBO VEBO IB IC PT Top, Tstg 40 40 60 60 5.0 0.25 10 6.0 100 -55 to +175 Max. 1.75 80 80 Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = +250C (1) @ TC = +250C (2) .

  2N6384   2N6384


Document
TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/523 Devices 2N6383 2N6384 2N6385 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol 2N6383 2N6384 2N6385 Unit VCEO VCBO VEBO IB IC PT Top, Tstg 40 40 60 60 5.0 0.25 10 6.0 100 -55 to +175 Max. 1.75 80 80 Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temperature THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance Junction-to-Case RθJC 1) Derate linearly 34.2 mW/0C above TA > +250C 2) Derate linearly 571 mW/0C above TC > +250C TO-3* (TO-204AA) 0 *See Appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = +250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc 2N6383 2N6384 2N6385 2N6383 2N6384 2N6385 2N6383 2N6384 2N6385 40 60 80 40 60 80 1.0 1.0 1.0 Vdc V(BR)CEO Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBB = 100 Ω V(BR)CER Vdc Collector-Base Cutoff Current VCE = 40 Vdc VCE = 60 Vdc VCE = 80 Vdc ICBO mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6383, 2N6384, 2N6385, JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 40 Vdc VCE = 60 Vdc VCE = 80 Vdc Collector-Emitter Cutoff Current VCE = 40 Vdc, VBE = 1.5 Vdc VCE = 60 Vdc, VBE = 1.5 Vdc VCE = 80 Vdc, VBE = 1.5 Vdc Symbol IEBO 2N6383 2N6384 2N6385 2N6383 2N6384 2N6385 Min. Max. 5.0 1.0 1.0 1.0 0.3 0.3 0.3 Unit mAdc ICEO mAdc ICEX mAdc ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 5.0 Adc, VCE = 3.0 Vdc IC = 10 Adc, VCE = 3.0 Vdc Collector-Emitter Saturation Voltage IC = 5.0 Adc, IB = 10 mAdc IC = 10 Adc, IB = 0.1 Adc Base-Emitter Voltage IC = 5.0 Adc, VCE = 3.0 Vdc IC = 10 Adc, VCE = 3.0 Vdc hFE 1,000 100 20,000 VCE(sat) 2.0 3.0 2.8 4.5 Vdc VBE(on) Vdc DYNAMIC CHARACTERISTICS Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 MHz Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz hfe Cobo 20 300 200 pF SWITCHING CHARACTERISTICS Turn-On Time VCC = 30 Vdc; IC = 5.0 Adc; IB1 = 20 mAdc Turn-Off Time VCC = 30 Vdc; IC = 5.0 Adc; IB1 = -IB2 = 20 mAdc t on 2.5 10 µs µs t off SAFE OPERATING AREA DC Tests TC = +250C, 1 Cycle, t = 1.0 s Test 1 VCE = 10 Vdc, IC = 10 Adc All Types Test 2 VCE = 30 Vdc, IC = 3.33 Adc All Types Test 3 VCE = 40 Vdc, IC = 1.5 Adc 2N6383 VCE = 60 Vdc, IC = 0.4 Adc 2N6384 VCE = 80 Vdc, IC = 0.16 Adc 2N6385 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2 .


2N6383 2N6384 2N6385


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)