(TIC236x) SILICON TRIACS
SEMICONDUCTORS
TIC236A, TIC236B, TIC236C, TIC236D, TIC236E, TIC236M, TIC236N, TIC236S SILICON TRIACS
• • • • • • High c...
Description
SEMICONDUCTORS
TIC236A, TIC236B, TIC236C, TIC236D, TIC236E, TIC236M, TIC236N, TIC236S SILICON TRIACS
High current triacs 12 A RMS Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 50 mA (Quadrants 1-3) Compliance to ROHS
ABSOLUTE MAXIMUM RATINGS Value A
VDRM IT(RMS) ITSM IGM TC Tstg TL Repetitive peak off-state voltage (see Note1) Full-cycle RMS on-state current at (or below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave (see Note3) Peak gate current Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds
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Symbol
Ratings B C
Unit M S N
V A A A °C °C °C
D
E
100 200 300 400 500 600 700 800 12 100 ±1 -40 to +110 -40 to +125 230
THERMAL CHARACTERISTICS Symbol
R∂JC R∂JA
Ratings
Junction to case thermal resistance Junction to free air thermal resistance
Value
≤2 ≤ 62.5
Unit
°C/W
02/10/2012
COMSET SEMICONDUCTORS
1|3
datasheet pdf - http://www.DataSheet4U.net/
SEMICONDUCTORS
TIC236A, TIC236B, TIC236C, TIC236D, TIC236E, TIC236M, TIC236N, TIC236S
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
IDRM
Ratings
Repetitive peak off-state current Gate trigger current
Test Condition(s)
VD = Rated VDRM, , IG = 0 TC = 110°C Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = -12 V†, RL = 10 Ω, tp(g) = > 20 µs Vsupply = +12 V†, RL =...
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