(TIC216x) SILICON TRIACS
SEMICONDUCTORS
TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S SILICON TRIACS
• • • • • • 6 A RMS Glass Passivated...
Description
SEMICONDUCTORS
TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S SILICON TRIACS
6 A RMS Glass Passivated Wafer 100 V to 800 V Off-State Voltage Max IGT of 5 mA (Quadrants 1-3) Sensitive gate triacs Compliance to ROH
ABSOLUTE MAXIMUM RATINGS Value A
VDRM IT(RMS) ITSM ITSM IGM PGM PG(AV) TC Tstg TL Repetitive peak off-state voltage (see Note1) Full-cycle RMS on-state current at (or below) 70°C case temperature (see note2) Peak on-state surge current full-sine-wave (see Note3) Peak on-state surge current half-sine-wave (see Note4) Peak gate current Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤200 µs) Average gate power dissipation at (or below) 85°C case (see Note5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds
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Symbol
Ratings B
Unit S N
V A A A A W W °C °C °C
D
M
100 200 400 600 700 800 6 60 70 ±1 2.2 0.9 -40 to +110 -40 to +125 230
THERMAL CHARACTERISTICS Symbol
R∂JC R∂JA
Ratings
Junction to case thermal resistance Junction to free air thermal resistance
Value
≤ 2.5 ≤ 62.5
Unit
°C/W
30/10/2012
COMSET SEMICONDUCTORS
1|3
datasheet pdf - http://www.DataSheet4U.net/
SEMICONDUCTORS
TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
IDRM
Ratings
Repetitive peak off-state current Gate trigger current
Test Condition(s)
VD = Rated VDRM, , IG = 0 TC = 110°C Vsupply ...
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