2N2328

2N2327 thur 2N2329 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits Compliance to RoHS. MAXIMUM RATINGS (*) TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRSM(REP) VRSM(NONREP) Ratings Peak reverse blocking voltage (1) Non-repetitive peak blocking reverse voltage (t<5.0 ms) Forward Current RMS (all conduction angles) Peak Surge Current (One-Half Cycle, 60Hz) No Repetition Until Thermal Equilibrium is Restored. Peak Gate Power – Forward Average Gate Power - Forward Peak Gate Current – Forward Peak Gate Voltage - Forward Peak Gate Voltage - Reverse Operating Junction Temperature Range Storage Temperature Range 2N2327 250 350 http://www.DataSheet4U.net/ 2N2328 300 400 1.6 2N2329 400 500 Unit V V A IT(RMS) ITSM PGM PG(AV) IGM VGFM VGRM TJ TSTG 15 0.1 0.01 0.1 A W W A 6.0 6.0 -65 to +125 -65 to +150 V V °C 12/11/2012 COMSET SEMICONDUCTORS 1|3 datasheet pdf - http://www.DataSheet4U.net/ 2N2327 thur 2N2329 ELECTRICAL CHARACTERISTICS (*) TJ=25°C unless otherwise noted, RGK=1000Ω Symbol VDRM IRRM IDRM Ratings Peak Forward Blocking Voltage Min : (1) Peak Reverse Blocking Current (Rated VDRM, TJ =125°C) Peak Forward Blocking Current (Rated VDRM, TJ =125°C) Forward « on » Voltage IT =1.0 A Peak IT =1.0 A Peak TC =85°C Gate Trigger Current (2) Anode Voltage=6.0 Vdc, RL=100Ω Anode Voltage=6.0 Vdc, RL=100Ω TC=-65°C Gate Trigger Voltage Anode Voltage=6.0 V, RL=100Ω Anode Voltage=6.0 V, RL=100Ω TC=-65...