2N2326

2n2322 to 2n2326 SILICON THYRISTORS All-diffused PNPN thyristors designed for grating operation in mA/µA signal or detection circuits Compliance to RoHS. MAXIMUM RATINGS (*) TJ=125°C unless otherwise noted, RGK=1000Ω Symbol VRRM(REP) VRSM(NONREP) Ratings Peak reverse blocking voltage (*) Non-repetitive peak blocking reverse voltage (t<5.0 ms) Forward Current RMS (all conduction angles) Peak Surge Current (One-Half Cycle, 60Hz) No Repetition Until Thermal Equilibrium is Restored. Peak Gate Power – Forward Average Gate Power Forward Peak Gate Current – Forward Peak Gate Voltage - Forward Peak Gate Voltage - Reverse Operating Junction Temperature Range Storage Temperature Range 2N2322 25 40 http://www.DataSheet4U.net/ 2N2323 50 75 2N2324 100 150 1.6 2N2325 150 225 2N2326 200 300 Unit V V A IT(RMS) ITSM PGM PG(AV) IGM VGFM VGRM TJ TSTG 15 0.1 0.01 0.1 6.0 6.0 -65 to +125 A W W A V V °C -65 to +150 12/11/2012 COMSET SEMICONDUCTORS 1|3 datasheet pdf - http://www.DataSheet4U.net/ 2n2322 to 2n2326 ELECTRICAL CHARACTERISTICS (*) TJ=25°C unless otherwise noted, RGK=1000Ω Symbol VDRM IRRM Ratings Peak Forward Blocking Min : Voltage (1) Peak Reverse Blocking Current (Rated VDRM, TJ =125°C) Peak Forward Blocking Current (Rated VDRM, TJ =125°C) Forward « on » Voltage ITM=1.0 A Peak ITM =3.14 A Peak TC =85°C Gate Trigger Current (2) Anode Voltage=6.0 Vdc RL=100Ω Anode Voltage=6.0 Vdc RL=100Ω, TC=-65°C Gate Trigger Voltage Anode Voltage=6.0 V RL=100Ω Anode Voltage=6.0 V ...