2N1597

2N1595 – 2N1596 – 2N1597 – 2N1598 – 2N1599 SILICON THYRISTORS Industrial-type, low-current silicon controlled rectifiers in a three-lead package ideal for printed-circuit applications Current handling capability of 1.6 amperes at junction temperetures to 125°C. Compliance to RoHS. MAXIMUM RATINGS (*) TJ=125°C unless otherwise noted Symbol VRSM(REP) IT(RMS) ITSM PGM PG(AV) IGM VGFM VGRM TJ TSTG Ratings Peak reverse blocking voltage (*) Forward Current RMS (all conduction angles) Peak Surge Current (One Cycle, 60Hz, TJ=-65 to+125°C) Peak Gate Power – Forward Average Gate Power - Forward Peak Gate Current – Forward Peak Gate Voltage - Forward Peak Gate Voltage - Reverse Operating Junction Temperature Range Storage Temperature Range 2N1595 50 2N1596 100 2N1597 200 1.6 2N1598 300 2N1599 400 Unit V A A W W A V V °C http://www.DataSheet4U.net/ 15 0.1 0.01 0.1 10 10 -65 to +125 -65 to +150 12/11/2012 COMSET SEMICONDUCTORS 1|3 datasheet pdf - http://www.DataSheet4U.net/ 2N1595 – 2N1596 – 2N1597 – 2N1598 – 2N1599 ELECTRICAL CHARACTERISTICS TJ=25°C unless otherwise noted, RGK=1000Ω Symbol VDRM IRRM IDRM IGT Ratings Peak Forward Blocking Min : Voltage * Peak Reverse Blocking Current (Rated VDRM, TJ =125°C) Peak Forward Blocking Current (Rated VDRM with gate open , TJ =125°C) Gate Trigger Current Anode Voltage=7.0 Vdc, RL=12Ω Gate Trigger Voltage Anode Voltage=7.0 Vdc, RL=12Ω VDRM = Rated, RL=100Ω, TJ=125°C Holding Current Anode Voltage=7.0 Vdc, gate open Forward On Volt...