SEMICONDUCTORS
NPN TIP41-A-B-C SILICON POWER TRANSISTORS
They are epitaxial-base NPN power transistors mounted in jedec TO-220 plastic package. They are intended for use in medium power linear and switching applications. PNP complements are TIP42-A-B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C
Value
40 60 80 100 40 60 80 100
Unit
VCBO
Collector-Base Voltage
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V
VCEO
Collector-Emitter Voltage
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
6
A
ICM
Collector Peak Current
10
A
04/10/2012
COMSET SEMICONDUCTORS
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datasheet pdf - http://www.DataSheet4U.net/
SEMICONDUCTORS
NPN TIP41-A-B-C
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C
Value
Unit
IB
Base Current
2
A
@ Tc < 25° PC Power Dissipation @ Ta < 25°
65 Watts 2
TJ
Junction Temperature
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150 °C -65 to +150
Ts
Storage Temperature range
THERMAL CHARACTERISTICS Symbol Ratings
TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C
Value
Unit
RthJ-MB
From junction to mounting base
1.92
°C/W
RthJ-A
From junction to ambient in free air
62.5
°C/W
04/10/2012
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datasheet pdf - http://www.DataSheet4U.net/
SEMICONDUCTORS
NPN TIP41-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C TIP41 TIP41A TIP41B TIP41C
Min
Typ
Max
Unit
ICES
Collector Cutoff Current
IE= 0, VCE = VCEO
-
-
0.4
Ma
IB= 0, VCE = 30V ICEO Collector Cutoff Current IB= 0, VCE = 60V
-
-
0.7 mA 0.7
IEBO
Emitter Cutoff Current
VEB= 5 V, IC= 0
40 60 80 100 -
-
1 1.5
mA
VCEO
Collector-Emitter Breakdown Voltage (*)
IC= 30 mA, IB= 0
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V
VCE(SAT)
Collector-Emitter saturation Voltage (*)
IC= 6 A, IB= 600 mA
V
VBE(on)
Base-Emitter Voltage (*)
IC= 6 A, VCE= 4 V
-
-
2
V
VCE= 4 V, IC= 0.3 A hFE DC Current Gain (*) VCE= 4 V, IC= 3 A
30
-
-
15
-
75
hfe
Small Signal Current Gain
VCE= 10 V, IC= 0.5 A, f= 1kHz
20
-
-
-
fT
Current Gain-Bandwidth Product
VCE= 10 V, IC= 0.5 A
3
-
-
MHz
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 04/10/2012 COMSET SEMICONDUCTORS 3|4
datasheet pdf - http://www.DataSheet4U.net/
SEMICONDUCTORS
NPN TIP41-A-B-C
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min. A B C D E F G H L M N P R S T U 9,90 15,65 13,20 6,45 4,30 2,70 2,60 15,75 1,15 3,50 0,46 2,50 4,98 2.49 0,70 Max. 10,30 15,90 13,40 6,65 4,50 3,15 3,00 17.15 1,40 3,70 1,37 0,55 2,70 5,08 2.54 0,90
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Pin 1 : Pin 2 : Pin 3 : Case :
Base Collector Emitter Collector
September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems.
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04/10/2012 COMSET SEMICONDUCTORS
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