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TIP130

Silicon NPN Darlington Power Transistor

Description

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 4A ·Complement to Type TIP135 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA...

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