TIP111

SEMICONDUCTORS NPN TIP110-111-112 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. PNP complements are TIP115-116-117 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-Base Voltage Ratings TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 Value 60 80 100 60 80 100 5 Unit V VCEO Collector-Emitter Voltage http://www.DataSheet4U.net/ V VEBO Emitter-Base Voltage V IC Collector Current 2 A ICM Collector Peak Current 4 A IB Base Current 50 mA @ Tc < 25° PT Power Dissipation @ Ta < 25° 50 Watts 2 TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range 05/10/2012 COMSET SEMICONDUCTORS 1 |3 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS NPN TIP110-111-112 THERMAL CHARACTERISTICS Symbol RthJ-case From junction-case Ratings TIP110 TIP111 TIP112 TIP110 TIP111 TIP112 Value 2.5 Unit °C/W RthJ-amb From junction-ambient 62.5 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO Ratings Collector Cutoff Current Test Condition(s) IE= 0,VCB = VCBOmax http://www.DataSheet4U.net/ Min - Typ - Max 1 Unit mA ICEO Collector Cutoff Current IE= 0, VCE = 1/2...