TIP100

SEMICONDUCTORS NPN TIP100-101-102 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. PNP complements are TIP105-106-107 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-Base Voltage Ratings TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 TIP100 TIP101 TIP102 Value 60 80 100 60 80 100 5 Unit V VCEO Collector-Emitter Voltage http://www.DataSheet4U.net/ V VEBO Emitter-Base Voltage V IC Collector Current 8 A ICM Collector Peak Current 15 A IB Base Current 1 A @ Tc < 25° PT Power Dissipation @ Ta < 25° 80 Watts 2 TJ Junction Temperature 150 °C -65 to +150 Ts Storage Temperature range 04/10/2012 COMSET SEMICONDUCTORS 1|3 datasheet pdf - http://www.DataSheet4U.net/ SEMICONDUCTORS NPN TIP100-101-102 THERMAL CHARACTERISTICS Symbol RthJ-case RthJ-amb From junction-case From junction-ambient Ratings Value 1.56 62.5 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO Ratings Collector Cutoff Current Test Condition(s) IE= 0,VCB = VCBOmax IE= 0, VCE = 1/2 VCEOmax http://www.DataSheet4U.net/ Min - Typ - Max 50 Unit µA ICEO Collector Cutoff Current IEBO Emitter Cutoff Current Collecto...