MJ4034

NPN MJ4033 – MJ4034 – MJ4035 MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS They are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use as output devices in complementary general purpose amplifier applications. The complementary PNP types are the MJ4030, MJ4031, MJ4032. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCBO Collector-Base Voltage Ratings http://www.DataSheet4U.net/ Value MJ4033 MJ4034 MJ4035 MJ4033 MJ4034 MJ4035 MJ4033 MJ4034 MJ4035 60 80 100 60 80 100 5.0 16 0.5 150 200 -65 to +200 Unit V IE=0 VCEO Collector-EmitterVoltage IB=0 V VEBO IC IB PT TJ Ts Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature IC=0 V A A W °C @ TC < 25° THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.17 Unit °C/W 29/10/2012 COMSET SEMICONDUCTORS 1|3 datasheet pdf - http://www.DataSheet4U.net/ NPN MJ4033 – MJ4034 – MJ4035 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO Ratings Collector-Emitter Voltage (*) Collector Cutoff Current Test Condition(s) IC=100 mA, IB=0 VCE=30 Vdc, IB=0 VCE=40 Vdc, IB=0 VCE=50 V, IB=0 VBE=5.0 V, IC=0 VCB=60 V RBE=1.0 kΩ VCB=80 V RBE=1.0 kΩ VCB=100 V RBE=1.0 kΩ VCB=60 V RBE=1.0 kΩ TC=150°C VCB=80 V RBE=1.0 kΩ TC=150°C VCB=100 V RBE=1.0 kΩ TC=150°C IC=10 A IB=40 mA IC=16 A IB=80 mA IC=10 A VCE=3.0V VCE=10 V IC=3....